半導体の封止成形方法

Sealing formation method of semiconductor

Abstract

(57)【要約】 【課題】 ワイヤーの曲がり不良の発生を防ぐことがで きる半導体の封止成形方法を提供する。 【解決手段】 半導体素子1及び接続用のワイヤー2を 熱可塑性樹脂組成物で封止して半導体装置を製造する。 PPS樹脂と無機充填材を含有する熱可塑性樹脂組成物 を用い、PPS樹脂を80〜99重量%含有する低溶融 粘度の熱可塑性樹脂組成物でワイヤー1の周囲を封止し た後、その外側をこの樹脂組成物より高溶融粘度でPP S樹脂を30〜70重量%含有する熱可塑性樹脂組成物 で封止する。ワイヤー1の周囲はPPS樹脂の含有率が 高く溶融粘度が低い流動性の良好な熱可塑性樹脂組成物 で封止することができ、ワイヤー1を押し流すスウィー プの現象が生じ難くい。
PROBLEM TO BE SOLVED: To provide a method for performing the sealing formation of a semiconductor that can prevent the bending failures of a wire from occurring. SOLUTION: A semiconductor device is manufactured by sealing a semiconductor element 1 and a wire 3 for connection with a thermoplastic resin composition. The thermoplastic resin composition containing a PPS resin and an inorganic filler is used, the surrounding of a wire 3 is sealed by a thermoplastic resin composition with a low melting viscosity containing 80-99 wt.% PPS resin, and then the outside is sealed by the thermoplastic resin composition that has a melting viscosity higher than the resin composition and contains 30-70 wt.% PPS resin. The surrounding of the wire 3 can be sealed with the thermoplastic resin composition with a high content of PPS resin, a low melting viscosity, and satisfactory flow behavior, thus preventing a sweeping phenomenon for pushing the wire 3 to flow from occurring easily. COPYRIGHT: (C)2000,JPO

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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    US-7456091-B2November 25, 2008Renesas Technology Corp.Semiconductor device and method of manufacturing the same
    US-7659635-B2February 09, 2010Renesas Technology Corp.Semiconductor device and method of manufacturing the same